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How To Overcome The Low Utilization Rate Of Magnetron Sputtering Target

Haohai Metal Materials Co., Ltd. | Updated: Jul 18, 2017

  How to overcome the low utilization rate of magnetron sputtering target

  Rotating target is widely used in solar cells, architectural glass, automotive glass, semiconductors, flat-panel TVs and other industries.

  Cylindrical rotating target has a high magnetic field strength, high sputtering efficiency of the target, high deposition rate of the film, sputtering target and a uniform film layer can be deposited on a large area planar substrate on both sides of the target. At the same time through the rotation mechanism to improve the utilization of the target. Target cooling is sufficient, the target surface can withstand higher power sputtering. Combining it with intermediate frequency dual target magnetron sputtering technology can significantly improve production efficiency while reducing production costs.

  Magnetron sputtering has many advantages, but also the existence of low deposition rate and target surface etching uneven, low utilization of target defects. Such as flat target target utilization is generally only about 20% to 30%, sputtering target resulting in its sputtering efficiency is relatively low. For some precious metals such as gold, silver, platinum, and some high-purity alloy targets, such as the preparation of ITO film, electromagnetic film, superconducting film, dielectric film and other layers of precious metal targets, how to overcome the magnetron sputtering Target utilization is low, thin film deposition is not uniform and other shortcomings is very important.

  Rectangular planar magnetron sputtering target target etching heterogeneity is mainly reflected in two aspects, on the one hand is the width of the target width of the uneven etching, on the other hand, sputtering target the traditional design of the rectangular plane sputtering target sputtering groove The track is closed and the anomalous etch phenomenon is prone to occur at the diagonal position of the target end, and the etching at the joint between the target end and the straight is abnormal and the etching in the middle area is shallow and the etching Severe parts are always diagonal, so the phenomenon is also known as the end effect or diagonal effect. The end-etch effect of the target greatly reduces the uniformity of the etch channel depth, and the cylindrical rotating target can solve these problems very well and thus has a higher utilization rate.