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Application Of Ni - Pt Alloy Sputtering Target In Semiconductor Manufacturing

Haohai Metal Materials Co., Ltd. | Updated: Jun 08, 2017

  Application of Ni - Pt Alloy Sputtering Target in Semiconductor Manufacturing

  Nickel Platinum Alloy Sputtering Target

  At present, the main method of preparing nickel-platinum silicide film is to first form an ion implantation layer in the silicon region of the semiconductor substrate, and then prepare a layer of silicon epitaxial layer on it, followed by sputtering on the surface of the silicon epitaxial layer by magnetron sputtering A layer of NiPt film, and finally through the annealing process to form nickel platinum silicide film.

  Nickel Platinum Silicide Films in Semiconductor Manufacturing Applications:

  1. Application in Schottky Diode Manufacturing: A typical application of nickel-platinum silicide films in semiconductor devices is Schottky diodes. With the development of Schottky diode technology, metal silicide - silicon contact has replaced the traditional metal - silicon contact, to avoid the surface defects and contamination, reducing the impact of the surface state, improve the positive characteristics of the device, To the pressure, reverse energy impact, high temperature, anti-static, anti-burn ability. Nickel-platinum silicide is the ideal Schottky barrier contact material, on the one hand nickel-platinum alloy as a barrier metal, with good high temperature stability; the other hand, through the alloy composition ratio changes to achieve the barrier level Adjustment. The method is prepared by sputtering the nickel-platinum alloy layer on the N-type silicon semiconductor substrate by magnetron sputtering, and vacuum annealing is carried out in the range of 460 ~ 480 ℃ for 30 min to form the NiPtSi-Si barrier layer. Usually also need to sputter NiV, TiW and other diffusion barrier, blocking the interdiffusion between the metal, improve the device's anti-fatigue performance.

  2. Applications in semiconductor integrated circuits: Nickel-platinum silicides are also widely used in ultra-large scale integrated circuit (VLSI) microelectronic devices in the source, drain, gate and metal electrode contact. At present, Ni-5% Pt (mole fraction) has been successfully applied to 65nm technology, Ni-10% Pt (mole fraction) applied to 45nm technology. With the further reduction of the linewidth of the semiconductor device, it is possible to further improve the Pt content in the nickel-platinum alloy to prepare the NiPtSi contact film. The main reason is that the increase of the Pt content in the alloy can improve the high temperature stability of the film and improve the interface Appearance, reduce the invasion of defects. The thickness of the nickel-platinum alloy film layer on the surface of the corresponding silicon device is usually only about 10nm, and the method used to form the nickel-platinum silicide is one or more steps of rapid heat treatment. The temperature range is 400-600 ℃ and the time is 30 ~ 60s The